Abstract
In this work, TiN thin films (with a thickness ranging from to 150 [A degree ]) were deposited on glass substrates, using a d. c. magnetron sputter system. The films, containing different Tantalum (Ta) concentrations: 2, 4 and 8 [at%], were prepared at a discharge power of 15 [W/cm super(2)] during 10 seconds. Transmittance spectra and electrical resistivity were obtained and discussed in terms of microstructure and band structure changes. It has been found that there is a remarkable effect of tantalum addition (Ta atoms induce non monotonic changes) on both optical and electrical properties, giving rise to some interesting results: very low resistivity for approximately 2 [at%] of Ta content, and a relatively high transmission in the visible region of the optical spectrum with low transmittance in the near infrared region for the same concentration.