n-Type beta-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering

Book chapter

Open access

Mahmoud Shaban and Tsuyoshi Yoshitake

pp.315-330

Intech Europe

01/01/2011

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

Telecommunications

url

https://doi.org/10.5772/14775View

Published (Version of record) Open

1 Record Views

Title: n-Type beta-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering
Creators - without role: Mahmoud Shaban - Sauth Valley Univ, Qina, Egypt
Tsuyoshi Yoshitake - Kyushu University
Contributors - without role: G F DallaBetta
Publication Details: pp.315-330
Publisher: Intech Europe; RIJEKA
Number of pages: 16
Identifiers: 9928574808331
Academic Unit: Qassim University
Language: English
Resource Type: Book chapter