Abstract
Thin films of ZnO were deposited, on Si substrates, using the RF-sputtering technique and irradiated by the 175 MeV Au+13 beams. The structural changes were investigated by x-ray diffraction (XRD) measurements. The particle size found to increase with the increasing ion fluence up to 1x10(12) ion/cm(2). At highest irradiation fluence of 5x10(12) ion/cm(2) the average particle size decreases. The Raman spectroscopy measurements were performed to understand the local phonon mode of the samples. The surface morphology of the as-deposited and irradiated thin films is measured by the Atomic Force Microscopy (AFM).