Sign in
Back
1EV GAN(x)AS(1-x-y)SB(y) MATERIAL FOR LATTICE-MATCHED III-V SOLAR CELL IMPLEMENTATION ON GAAS AND GE
Conference proceeding

1EV GAN(x)AS(1-x-y)SB(y) MATERIAL FOR LATTICE-MATCHED III-V SOLAR CELL IMPLEMENTATION ON GAAS AND GE

Tien Khee Ng, Soon Fatt Yoon, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Kim Luong Lew, Kah Pin Chen, Eugene A. Fitzgerald, Arthur J. Pitera, Steve A. Ringel, …
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, p.1130
IEEE Photovoltaic Specialists Conference
01/01/2009

Abstract

Energy & Fuels Science & Technology Technology
The effect of different arsenic species (As-2 or As-4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/GaNAsSb/GaAs p(+) n(-) n(+) devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As-2 overpressure for GaNAsSb growth.

Metrics

1 Record Views

Details