Abstract
Conference Title: 2017 IEEE International Electron Devices Meeting (IEDM) Conference Start Date: 2017, Dec. 2 Conference End Date: 2017, Dec. 6 Conference Location: San Francisco, CA, USA A FinFET technology named 22FFL has been developed that combines high-performance, ultra-low power logic and RF transistors as well as single-pattern backend flow for the first time. High performance transistors exhibit 57%/87% higher NMOS/PMOS drive current compared to the previously reported 22nm technology [1]. New ultra-low power logic devices are introduced that reduce bit cell leakage by 28x compared to a regular SRAM cell enabling a new 6T low-leakage SRAM with bit cell leakage of sub 1pA/cell. An RF device with optimized layout has been developed and shows excellent f T /f MAX of (230GHz/284GHz) and (238GHz/242GHz) for NMOS and PMOS respectively.