Abstract
This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.