Sign in
Back
600 V PiN diodes fabricated using on-axis 4H silicon carbide
Conference proceeding   Peer reviewed

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad ul Hassan, Anne Henry, Erik Janzen, Bertrand Vergne, …
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol.717-720, pp.969-972
Materials Science Forum
01/01/2012
DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.969

Abstract

Materials Science Materials Science, Multidisciplinary Science & Technology Technology
This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.

Metrics

1 Record Views

Details