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A Novel Damage-Free High-k Etch Technique Using Neutral Beam-Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs
Conference proceeding

A Novel Damage-Free High-k Etch Technique Using Neutral Beam-Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs

K. S. Min, C. Y. Kang, C. Park, C. S. Park, B. J. Park, J. B. Park, M. M. Hussain, Jack C. Lee, B. H. Lee, P. Kirsch, …
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, p.406
International Electron Devices Meeting
01/01/2009

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
For the first time, a novel damage-free neutral beam-assisted atomic etching process has successfully demonstrated the removal of the residual high-k dielectric layer after gate patterning. Due to its neutralized atomic flux and chemical reaction, high etch selectivity is observed to improve device performance and reliability. This process should significantly enhance high-k/metal gate manufacturability.

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