Abstract
In this paper a novel high gain buck-boost multilevel converter using double voltage-lift switched-induct or (D-VLSI) cell is proposed. Series connection of conventional DC-DC converter is not a viable solution to achieve high voltage gain. Thus, DC-DC multilevel converters are employed to achieve high voltage gain. The proposed high gain multilevel buck-boost converter combines the function of double voltage-lift switched-inductor (D-VLSI) cell and voltage multiplier cell. In this paper double voltage-lift switched-inductor (D-VLSI) cell is used to enhance the boost capability of multilevel buck-boost converter. 2N+1 capacitors, 2N+3 diodes, two switches and two inductors are required to design the proposed N-level buck-boost converter topology. Proposed buck-boost multilevel converter circuit can be designed by using low voltage rating devices, because voltage stress across each power devices is low. The main advantage of proposed converter circuit is high voltage is achieved without using transformer, coupled inductor and extreme duty cycle. The voltage gain of proposed buck-boost multilevel converter is depends upon the duty ratio and number of levels. The proposed high gain multilevel buck-boost converter has been designed for three levels with rated power 200W, output voltage is 300V, input supply voltage is 12V and switching frequency is 50kHz. The proposed buck-boost multilevel converter circuit is simulated in MATLAB/SIMULINE.