Abstract
This paper presents a novel high gain DC-DC multilevel boost converter using voltage-lift switched-inductor (VLSI) cell. Cascading of conventional boost converters is not a viable solution to achieve high voltage gain. Thus, DC-DC multilevel converters are employed to achieve high conversion ratio. The proposed high gain DC-DC multilevel boost converter topology is non-isolated which combines the function of voltage-lift switched-inductors (VLSI) cell and voltage multiplier cell. In this paper voltage-lift switched-inductor (VLSI) cell is used to improve the boost capability of multilevel DC-DC converter. 2N capacitors, 2N+3 diodes, two inductors and single switch are needed to design proposed N-level DC-DC topology. Proposed DC-DC multilevel converter topology can be synthesized by using low voltage rating devices because blocking voltage across each power devices is less. The main advantage of this multilevel topology is high conversion ratio is achieved without using coupled inductor, transformer and extreme duty cycle. The conversion ratio of this multilevel DC-DC converter is depends upon the duty cycle and number of levels present in the voltage multiplier cell. The proposed DC-DC multilevel converter has been designed for three levels with rated power 200W, input supply voltage is 12V, output voltage is 288V and switching frequency is 50kHz. The proposed DC-DC multilevel converter topology is simulated in MATLAB/SIMULINK. The simulation results will verify the validity of the analytical design.