Abstract
If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/(110) nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an I-on of 930 mu A/mu m and 680 mu A/mu m for nMOSFETs and pMOSFETs without implementing any other stress engineering process.