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A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays
Conference proceeding

A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

H.S. Lim, Y.L. Lam, Y.C. Chan, B.S. Ooi, V. Aimez, J. Beauvais, J. Beerens and IEEE
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551), Vol.3, pp.412-413 vol.3
2001
DOI: https://doi.org/10.1109/ECOC.2001.989691

Abstract

Diode lasers Epitaxial growth Etching Implants Indium gallium arsenide Laser tuning Lithography Optical arrays Photonic band gap Resists
10-channel monolithic multiple-wavelength laser diodes were demonstrated using a one-step gray mask and reactive ion etching technique to create a graded-thickness SiO/sub 2/ implant mask, followed by low energy P/sup ++/ implantation for bandgap tuning.

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