Abstract
AFM-scratching was performed through thin oxide layer which was either a native oxide layer, (1.5-2 nm thick) or a thermal oxide layer (10 nm thick). Due to their insulating properties, the SiO2 films act as masks for the metal electrochemical deposition. In the scratched openings copper deposition can take place selectively and thus nano-scale metal lines could be successfully plated onto the p-type silicon substrates. Using particularly, if sufficiently thick thermal oxide has advantages over the native oxide, it allows a H-termination of the Si within the grooves (HF treatment) without eliminating the oxide layer on the rest of the surface.