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A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates
Conference proceeding

A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

H.-C. Wen, K. Choi, P. Majhi, H. Alshareef, C. Huffman, B.H. Lee and IEEE
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), pp.105-106
2005
DOI: https://doi.org/10.1109/VTSA.2005.1497097

Abstract

Annealing Dielectric materials Etching Hafnium High K dielectric materials MOS devices Nitrogen Plasma applications Plasma materials processing Plasma temperature
Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by /spl sim/300 meV by varying the nitrogen content in the film even after 1000 /spl deg/C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.

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