A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

Conference proceeding

Peer reviewed

O Gunawan, T. K Ong, Y. W Chen, B. S Ooi, Y. L Lam, Y Zhou and Y. C Chan

Surface & coatings technology, Vol.130(1), pp.116-121

Proceedings from IUMRS-ICAM '99 Symposium X, Surface Engineering, June 13-18 1999, Beijing, China

01/08/2000

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electrical properties of specific thin films

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Iii-v semiconductors

Physics

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Title: A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure
Creators - without role: O Gunawan - Nanyang Technological University
T. K Ong - Nanyang Technological University
Y. W Chen - Nanyang Technological University
B. S Ooi - Nanyang Technological University
Y. L Lam - Nanyang Technological University
Y Zhou - Nanyang Technological University
Y. C Chan - Nanyang Technological University
Publication Details: Surface & coatings technology, Vol.130(1), pp.116-121
Conference: Proceedings from IUMRS-ICAM '99 Symposium X, Surface Engineering, June 13-18 1999, Beijing, China
Publisher: Elsevier
Identifiers: 9941357308331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding