A yellow emitting InGaN/GaN nanowires-based light emitting diode grown on scalable quartz substrate

Aditya Prabaswara; Tien Khee Ng; Chao Zhao; Bilal Janjua; Ahmed Y Alyamani; Munir M El-Desouki; Boon S Ooi

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A yellow emitting InGaN/GaN nanowires-based light emitting diode grown on scalable quartz substrate

Aditya Prabaswara, Tien Khee Ng, Chao Zhao, Bilal Janjua, Ahmed Y Alyamani, Munir M El-Desouki and Boon S Ooi

The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1

01/01/2017

Abstract

Electro-optics

Gallium nitrides

Indium gallium nitrides

Interlayers

Light emitting diodes

Nanowires

Organic light emitting diodes

Quartz

Substrates

Conference Title: 2017 Conference on Lasers and Electro-Optics (CLEO) Conference Start Date: 2017, May 14 Conference End Date: 2017, May 19 Conference Location: San Jose, CA, USA The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

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Title: A yellow emitting InGaN/GaN nanowires-based light emitting diode grown on scalable quartz substrate
Creators - without role: Aditya Prabaswara
Tien Khee Ng
Chao Zhao
Bilal Janjua
Ahmed Y Alyamani
Munir M El-Desouki
Boon S Ooi
Publication Details: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1
Publisher: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Identifiers: 9941248008331
Academic Unit: King Abdullah University of Science & Technology; King Abdulaziz City for Science & Technology
Language: English
Resource Type: Conference proceeding