Absorption Bleaching in Silicon via High-Power Terahertz Pulses: Carrier Dependence

G. Sharma; I. Al-Naib; H. Hafez; R. Morandotti; T. Ozaki; IEEE

doi:10.1364/CLEO_AT.2012.JW2A.46

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Absorption Bleaching in Silicon via High-Power Terahertz Pulses: Carrier Dependence

G. Sharma, I. Al-Naib, H. Hafez, R. Morandotti, T. Ozaki and IEEE

2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2

Conference on Lasers and Electro-Optics

01/01/2012

DOI: https://doi.org/10.1364/CLEO_AT.2012.JW2A.46

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We present optical pump / high-power THz probe measurements for undoped silicon at different optical pump fluences. We observe an absorption bleaching of intense terahertz (THz) pulses, which decreases with increasing optical pump fluence.

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Details

Title: Absorption Bleaching in Silicon via High-Power Terahertz Pulses: Carrier Dependence
Creators - without role: G. Sharma - Université du Québec
I. Al-Naib - Université du Québec
H. Hafez - Université du Québec
R. Morandotti - Université du Québec
T. Ozaki - Université du Québec
IEEE
Publication Details: 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
Series: Conference on Lasers and Electro-Optics
Publisher: IEEE
Number of pages: 2
Identifiers: 9914904208331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Conference proceeding