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Absorption and single-pass gain measurements in bilayer quantum dot laser structure
Conference proceeding

Absorption and single-pass gain measurements in bilayer quantum dot laser structure

M. A. Majid, D. T. D. Childs, K. Kennedy, R. Airey, R. A. Hogg, E. Clarke, P. Spencer and R. Murray
2013 Saudi International Electronics, Communications and Photonics Conference, pp.1-3
04/2013
DOI: https://doi.org/10.1109/SIECPC.2013.6550989

Abstract

Absorption gain and absorption Gain measurement Gallium arsenide Measurement by laser beam Molecular beam epitaxy multi-section Optical variables measurement Quantum dot lasers quantum dots (QDs) Temperature measurement
In this paper we report on the absorption and single-pass gain analysis of molecular beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material using multisection method. The measurement allowed us to exclude unguided spontaneous emission and measure the internal optical loss accurately.

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