Abstract
High-quality GaN layers with thickness exceeding 100 mu m were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the Will ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.