Abstract
We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as "ferroelectric-like". The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory "on" to memory "off' current ratio is close to 3 x 10(4), while time-dependent studies show retention times of 14 hours and more.