Abstract
A novel implementation of a Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA) for use in satellite communications tracking receiver is presented in this paper. The proposed design is of a single stage LNA working between frequency range of 2000 MHz to 2200 MHz. The designed LNA exhibit a Noise Figure (NF) of 0.320 dB which is less than the available pHEMT S Band LNA designs along with a transducer gain greater than 10dB. The Voltage Standing Wave Ratio (VSWR) of the designed and simulated LNA is 1:1.324. Simulation and measurements are taken in Advanced System Design (ADS) software. The circuit is designed and simulated using FR4 PCB laminate.