Abstract
The electrical characteristics have been applied to metal organic vapor Phase deposition, MOVPD-epitaxial grow n-Si based Schottky structure. The temperature-dependent of the electrical characteristics of the Au/n-Si Schottky diode in the temperature range of 30 - 400 K were considered. The barrier height and ideality factor of Schottky diodes were obtained. It was observed that the zero bias barrier height decreases and the ideality factor n increases with decreasing temperature. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. Further, the homogeneous barrier height is estimated from the linear relationship between temperature-dependent experimental effective barrier heights and ideality factors. The effective Richardson constant is determined to be in good agreement with the theoretical value. The temperature-dependent J-V characteristics of the Au /n-Si Schottky diode can be successfully explained on the basis of thermionic emission (TE) mechanism with the Gaussian distribution of the barrier heights.