Analytical Modelling of Current in Higher Width Graphene Nanoribbon Field Effect Transistor

Tanvir Muntasir; Shuvomoy Das Gupta; Md. Shofiqul Islam; IEEE

doi:10.1109/EDSSC.2012.6482772

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Analytical Modelling of Current in Higher Width Graphene Nanoribbon Field Effect Transistor

Tanvir Muntasir, Shuvomoy Das Gupta, Md. Shofiqul Islam and IEEE

2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC), pp.1-4

IEEE International Conference on Electron Devices and Solid-State Circuits

01/01/2012

DOI: https://doi.org/10.1109/EDSSC.2012.6482772

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

An analytical model for drain-source current of higher width graphene-nanoribbon field-effect-transistor (GNR-FET) with back and top gates is developed. This analytical model is based on the two-dimensional Poisson's equation in the weak nonlocality approximation. Analytical formula for drain-source current is derived in terms of device parameters and applied voltages. Dependence of current on applied voltages is investigated. It is shown that drain-source current is controlled by applied voltages hence has applications in digital and analog circuits.

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Title: Analytical Modelling of Current in Higher Width Graphene Nanoribbon Field Effect Transistor
Creators - without role: Tanvir Muntasir - Bangladesh University of Engineering and Technology
Shuvomoy Das Gupta - Bangladesh University of Engineering and Technology
Md. Shofiqul Islam - Bangladesh University
IEEE
Publication Details: 2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC), pp.1-4
Series: IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher: IEEE
Number of pages: 4
Identifiers: 9936182308331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Conference proceeding