Abstract
The present work investigates the behavior of InSb (100) in 0. 1 M KOH with and without addition of halogen ion species in the electrolyte. In the absence of halogen-ion species, a compact oxide layer can be formed. The thickness, composition and morphology of the oxide layers were examined as a function of the applied potential. The results indicate that the anodic oxidation of InSb essentially shows a valve metal-like behavior. Up to several tens of volts, a thick oxide layer can be grown that is of a high quality. In the presence of halogen ions, breakdown of the oxide film occurs at very low applied voltages leading to localized corrosion of the InSb. The effect of different anions F-, Cl-, Br- and their concentration were studied. The results show a behavior that is very similar to pitting corrosion of metals.