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Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells
Conference proceeding

Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

N. Tetreault, L-P. Heiniger, M. Stefik, P. P. Labouchere, E. Arsenault, N. K. Nazeeruddin, G. A. Ozin, M. Graetzel and Mohammad K Nazeeruddin
ATOMIC LAYER DEPOSITION APPLICATIONS 7, Vol.41(2), pp.303-314
ECS Transactions
01/01/2011
DOI: https://doi.org/10.1149/1.3633681

Abstract

Electrochemistry Physical Sciences Physics Physics, Applied Science & Technology
Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.

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