Abstract
Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mu m/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim