Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy

M. G. Althobaiti; J. Stoner; V. R. Dhanak; R. J. Potter; I. Z. Mitrovic; IEEE

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Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy

M. G. Althobaiti, J. Stoner, V. R. Dhanak, R. J. Potter, I. Z. Mitrovic and IEEE

2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), pp.161-163

01/01/2015

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

In this work Ta2O5 films were deposited on germanium, by atomic layer deposition (ALD) at 250 degrees C with and without sulphur passivation. X-ray photoelectron spectroscopy (XPS) was carried out to investigate the band line-up of Ta2O5 films with respect to germanium. The results show that the valance band offsets of Ta2O5 with respect to sulphur-passivated and unpassivated Germanium are 2.67 eV and 2.84 respectively. The band gap value of 20 nm thick Ta2O5 films was determined to be 4.44 eV from the electron energy loss spectrum of O1s core level.

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Title: Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy
Creators - without role: M. G. Althobaiti - University of Liverpool
J. Stoner - University of Liverpool
V. R. Dhanak - University of Liverpool
R. J. Potter - University of Liverpool
I. Z. Mitrovic - University of Liverpool
IEEE
Publication Details: 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), pp.161-163
Publisher: IEEE
Number of pages: 3
Grant note: EP/I012907/1 / EPSRC; UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC)
Identifiers: 9910221808331
Academic Unit: Taif University
Language: English
Resource Type: Conference proceeding