Abstract
Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of similar to 1.57 mu m. Despite the bandgap blue-shift of similar to 70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the as-grown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.