Abstract
Conference Title: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) Conference Start Date: 2014, Oct. 28 Conference End Date: 2014, Oct. 31 Conference Location: Guilin, China Threshold voltage (V th ) instability of solution processed organic thin film transistors (TFTs) are investigated under different bias stress time and stress bias. Higher drain current (I D ) is observed during off-to-on sweep compare to the on-to-off sweep in the transfer characteristics. Negative gate bias stress results in a negative shift in the threshold voltage. This shift is attributed to the slow hole-trapping process and the relatively fast hole-detrapping process. The time dependence of threshold voltage is described by a carrier dynamic equation.