Sign in
Back
Bilayer for extending the wavelength of QD lasers
Conference proceeding   Open access  Peer reviewed

Bilayer for extending the wavelength of QD lasers

M. A. Majid, D. T. D. Childs, R. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer and R. Murray
QUANTUM DOTS 2010, Vol.245(1), p.012083
Journal of Physics Conference Series
01/09/2010
DOI: https://doi.org/10.1088/1742-6596/245/1/012083

Abstract

Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics
This paper reports on the analysis of MBE grown bilayer quantum dot (QD) laser material. Specifically, gain and absorption characteristics of 5x 'single' QD layers with InGaAs caps, 5x 'bilayer' QDs with GaAs caps and 5x 'bilayer' QDs with InGaAs cap layers are compared. For an In0.18Ga0.82As capped bilayer sample at room temperature, net modal gain is demonstrated beyond 1500 nm.
url
https://doi.org/10.1088/1742-6596/245/1/012083View
Published (Version of record) Open

Metrics

1 Record Views

Details