Abstract
Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p(+) emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (R-sh) in the range of 30-200 Omega/square could be achieved by varying the implanted dose. The saturation current density (J(oe)) of the passivated p(+) emitter with R-sh of similar to 125 Omega/square reached 95 fA/cm(2), and the contact resistivity was determined to be as low as 5x10(-6) Omega.cm(2). Such localized p(+) emitters can be applied to n-type IBC solar cells, which could avoid the high temperature thermal annealing step and related problems. (C) 2014 Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).