Broadband Flat-top Superluminescent Diode with Low Spectral Modulation at 850 nm

C. E. Dimas; C. L. Tan; V. Hongpingyo; Y. H. Ding; H. S. Djie; B. S. Ooi; IEEE

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Broadband Flat-top Superluminescent Diode with Low Spectral Modulation at 850 nm

C. E. Dimas, C. L. Tan, V. Hongpingyo, Y. H. Ding, H. S. Djie, B. S. Ooi and IEEE

2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, p.39

01/01/2008

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Optics

Physical Sciences

Science & Technology

Science & Technology - Other Topics

Technology

The broadest bandwidth (80 nm) superluminescent diode (SLD) with center wavelength at 850 nm fabricated on GaAs/AlGaAs double quantum-well structure is characterized and analyzed. The broadband flat-top like spectrum and a 0.3 dB spectral modulation enable this device to produce an axial resolution of 4 mu m in optical coherence tomography systems.

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Title: Broadband Flat-top Superluminescent Diode with Low Spectral Modulation at 850 nm
Creators - without role: C. E. Dimas - Lehigh University
C. L. Tan - Lehigh University
V. Hongpingyo - Lehigh University
Y. H. Ding - Lehigh University
H. S. Djie - JDSU
B. S. Ooi
IEEE
Publication Details: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, p.39
Publisher: IEEE
Number of pages: 2
Grant note: Carl Zeiss Meditec(Dublin, CA) Carnegie Mellon University, Lehigh University Pennsylvania Infrastructure Technology Alliance (PITA) Commonwealth of Pennsylvania Department of Community and Economic Development
Identifiers: 9942172308331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding