Abstract
We report on the development of wide gain InAs/InGaAlAs/lnP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at similar to 1.64 mu m center wavelength from simultaneous multiple confined states lasing at room temperature.