Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm

C. E. Dimas; C. T. Vishton; R. A. Merola; H. S. Djie; B. S. Ooi

doi:10.1117/12.700747

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Conference proceeding

Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm

C. E. Dimas, C. T. Vishton, R. A. Merola, H. S. Djie and B. S. Ooi

INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XI, Vol.6475(1), pp.64751B-64751B-8

Proceedings of SPIE

01/01/2007

DOI: https://doi.org/10.1117/12.700747

Abstract

Optics

Physical Sciences

Science & Technology

We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20 degrees C under continuous wave operation.

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Title: Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm
Creators - without role: C. E. Dimas - Lehigh University
C. T. Vishton - Lehigh University
R. A. Merola - Lehigh University
H. S. Djie - Lehigh University
B. S. Ooi - Lehigh University
Contributors - without role: Y Sidorin
C A Waechter
Publication Details: INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XI, Vol.6475(1), pp.64751B-64751B-8
Series: Proceedings of SPIE
Publisher: Spie-Int Soc Optical Engineering
Number of pages: 8
Grant note: Pennsylvania Infrastructure Technology Alliance (PITA) Commonwealth of Pennsylvania Department of Community and Economic Development Carl Zeiss Meditec Inc. partnership of Carnegie Mellon University, Lehigh University
Identifiers: 9943491708331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding