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CMOS Diodes Operating Beyond Avalanche Frequency
Conference proceeding

CMOS Diodes Operating Beyond Avalanche Frequency

Talal Al-Attar and IEEE
2011 12TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), pp.332-337
International Symposium on Quality Electronic Design
01/01/2011
DOI: https://doi.org/10.1109/ISQED.2011.5770746

Abstract

Computer Science Computer Science, Hardware & Architecture Engineering Engineering, Electrical & Electronic Science & Technology Technology
This paper describes IMPATT diodes designed and fabricated in 0.25 mu m CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40MHz to 110GHz confirmed avalanche frequency range from 30GHz to 55GHz and negative resistance tuning range from 30GHz to 80GHz. G&H model is verified and the impact of different device parameters are presented

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