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Carrier Distribution in InP/AlGaInP Quantum Dot Laser Diodes
Conference proceeding

Carrier Distribution in InP/AlGaInP Quantum Dot Laser Diodes

M. S. Al-Ghamdi, P. M. Smowton, P. Blood, A. B. Krysa and IEEE
2011 IEEE PHOTONICS CONFERENCE (PHO), p.169
01/01/2011

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
The threshold current density of InP quantum dot lasers exhibits distinctive behaviour for structures grown at 750 degrees C and becomes less pronounced as the growth temperature is decreased due to decreasing inhomogeneous broadening. This is explained in terms of carrier distribution in the quantum dot states.

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