Abstract
Conference Title: 2017 International Conference on Engineering & MIS (ICEMIS) Conference Start Date: 2017, May 8 Conference End Date: 2017, May 10 Conference Location: Monastir, Tunisia In this work, the impact of phonon transport and the effect of channel length of MOSFET transistors are numerically investigated. We have simulated heat transfer process using the Dual Phase Lag (DPL) model coupled with a temperature jump boundary condition. To explain the heat transfer process in these transistors, the Joule effect in the channel region supposed given by electrical parameters. Then, the proposed model coupled with the Poisson equation and the electrons and holes continuity equation. It was found that the electro-thermal model is able to predict heat transfer process in nano-transistors. On the other hand, we found that when the channel length increases, the phonon intensity becomes very stable and thereafter, the temperature and the heat flux distribution becomes more stable in the MOSFET transistors.