Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers

Guangyu Liu; Jing Zhang; Chee-Keong Tan; Nelson Tansu; IEEE

doi:10.1109/IPCon.2012.6358677

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Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers

Guangyu Liu, Jing Zhang, Chee-Keong Tan, Nelson Tansu and IEEE

2012 IEEE PHOTONICS CONFERENCE (IPC), pp.431-432

IEEE Photonics Conference

01/01/2012

DOI: https://doi.org/10.1109/IPCon.2012.6358677

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Science & Technology

Technology

The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.

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Title: Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers
Creators - without role: Guangyu Liu - Lehigh University
Jing Zhang - Lehigh University
Chee-Keong Tan - Lehigh University
Nelson Tansu - Lehigh University
IEEE
Publication Details: 2012 IEEE PHOTONICS CONFERENCE (IPC), pp.431-432
Series: IEEE Photonics Conference
Publisher: IEEE
Number of pages: 2
Identifiers: 9942858008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding