Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal

Anis Suhaili Bakri; Nafarizal Nayan; Ahmad Shuhaimi Abu Bakar; Riyaz Ahmad Mohamed Ali; Mohd Zainizan Sahdan; Soon Chin Fhong; Wan Haliza Abd Majid; Mohd Khairul Ahmad; Muliana Tahan; Nur Amaliyana Raship; Mohd Yazid Ahmad; Ali Kanakhir Aldabahi; IEEE

Conference proceeding

Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal

Anis Suhaili Bakri, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, Riyaz Ahmad Mohamed Ali, Mohd Zainizan Sahdan, Soon Chin Fhong, Wan Haliza Abd Majid, Mohd Khairul Ahmad, Muliana Tahan, Nur Amaliyana Raship, …

2020 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE 2020), pp.45-48

01/01/2020

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

Fabrication of amorphous GaN thin film was performed using RF magnetron sputtering without any external temperature on silicon substrate. Thickness of deposited GaN film was approximately 200 nm. This work presents the surface morphology and roughness of amorphous GaN using FESEM and AFM analyses, respectively. The amorphous GaN had a pebble like structure with an average surface roughness of 1.34 nm. The effect of the post-annealing of the GaN thin films was also presented. The XRD result of the post annealing showed that the gallium nitride oxide present after annealing process was done at ambient condition with an average surface roughness of 1.48 nm.

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Title: Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal
Creators - without role: Anis Suhaili Bakri - Univ Tun Hussein Onn Malaysia UTHM, Fac Elect & Elect Engn, Batu Pahat 86400, Johor, Malaysia
Nafarizal Nayan - Univ Tun Hussein Onn Malaysia UTHM, Microelect & Nanotechnol Shamsuddin Res Ctr MiNT, Batu Pahat 86400, Johor, Malaysia
Ahmad Shuhaimi Abu Bakar - Univ Malaya UM, Low Dimens Mat Res Ctr, Dept Phys, Fac Sci, Kuala Lumpur 50603, Malaysia
Riyaz Ahmad Mohamed Ali - Univ Tun Hussein Onn Malaysia UTHM, Microelect & Nanotechnol Shamsuddin Res Ctr MiNT, Batu Pahat 86400, Johor, Malaysia
Mohd Zainizan Sahdan - Univ Tun Hussein Onn Malaysia UTHM, Fac Elect & Elect Engn, Batu Pahat 86400, Johor, Malaysia
Soon Chin Fhong - Univ Tun Hussein Onn Malaysia UTHM, Microelect & Nanotechnol Shamsuddin Res Ctr MiNT, Batu Pahat 86400, Johor, Malaysia
Wan Haliza Abd Majid - Univ Malaya UM, Low Dimens Mat Res Ctr, Dept Phys, Fac Sci, Kuala Lumpur 50603, Malaysia
Mohd Khairul Ahmad - Univ Tun Hussein Onn Malaysia UTHM, Microelect & Nanotechnol Shamsuddin Res Ctr MiNT, Batu Pahat 86400, Johor, Malaysia
Muliana Tahan - Univ Tun Hussein Onn Malaysia UTHM, Fac Elect & Elect Engn, Batu Pahat 86400, Johor, Malaysia
Nur Amaliyana Raship - Univ Pertahanan Nasl Malaysia UPNM, Dept Elect & Elect Engn, Kuala Lumpur 57000, Malaysia
Mohd Yazid Ahmad - Nanorian Technol Sdn Bhd, 40 & 41-1,Jalan Kajang Perdana 3-2, Kajang 43000, Selangor, Malaysia
Ali Kanakhir Aldabahi - King Saud University
IEEE
Publication Details: 2020 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE 2020), pp.45-48
Publisher: IEEE
Number of pages: 4
Grant note: PRGS K256 / Ministry of Higher Education Malaysia; Ministry of Education, Malaysia A154; P28C1-17 / Collaborative Research in Engineering, Science and Technology (CREST) RD Grant H022 / Universiti Tun Hussein Onn Malaysia GPPS Grant K129 / Malaysia Productivity Corporation LR001A-2016A / Long Term Research Grant of Universiti Malaya; Universiti Malaya K035 / Collaborative Research Grant
Identifiers: 9951942608331
Academic Unit: King Saud University
Language: English
Resource Type: Conference proceeding