Charge Trapping Property of RTN Grown Oxynitride Films On Strained-Si

B. Majhi; C. Mahata; M. K. Hota; S. Mallik; T. Das; C. K. Maiti; IEEE

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Charge Trapping Property of RTN Grown Oxynitride Films On Strained-Si

B. Majhi, C. Mahata, M. K. Hota, S. Mallik, T. Das, C. K. Maiti and IEEE

2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, pp.157-160

01/01/2009

Abstract

Computer Science

Computer Science, Theory & Methods

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

Ultra thin (similar to 6-7nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers M high temperature of 900 degrees C and 1000 degrees C using rapid thermal nitridation in O-2+N-2 ambient. The border trap (Q(bt)) generation using the hysteresis in high-frequency capacitance-voltage (C-NI) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed. It has been observed that the interface trap charge density (D-it) and hysteresis decrease in 1000 degrees C RTN. It is also observed that the charge trapping behavior and the amount of border trap charge density are found to be low in the case of 1000 degrees C RTN process.

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Title: Charge Trapping Property of RTN Grown Oxynitride Films On Strained-Si
Creators - without role: B. Majhi - Indian Institute of Technology Kharagpur
C. Mahata - Indian Institute of Technology Kharagpur
M. K. Hota - Indian Institute of Technology Kharagpur
S. Mallik - Indian Institute of Technology Kharagpur
T. Das - Indian Institute of Technology Kharagpur
C. K. Maiti - Indian Institute of Technology Kharagpur
IEEE
Publication Details: 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, pp.157-160
Publisher: IEEE
Number of pages: 4
Identifiers: 9942078408331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding