Abstract
In this work, we propose a novel charge plasma based partial ground plane selective buried oxide MOSFET (CP-PGP-SELBOX-MOSFET). In the proposed device source, drain regions and the partial ground planes (PGPs) have been realized by using metals of different work-functions and not by the conventional method of doping. A two dimensional (2D) simulation study has revealed that the magnitude of the short-channel effects (SCEs) have got significantly reduced in the proposed device in comparison to the conventional one. Further, it has been observed that ION/IOFF ratio and subthreshold slope (SS) in the proposed device has been improved significantly in comparison to conventional SELBOX MOSFET. Further, the proposed device is free from doping related issues and can be fabricated at low temperature, as it does not employ the conventional ion implantation for realizing various regions.