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Charge transfer of n-type GaN photoelectrolysis in HCl solution for H-2 gas generation at a counterelectrode
Conference proceeding

Charge transfer of n-type GaN photoelectrolysis in HCl solution for H-2 gas generation at a counterelectrode

Katsushi Fujii, Masato Ono, Takashi Ito and Kazuhiro Ohkawa
HYDROGEN CYCLE-GENERATION, STORAGE AND FUEL CELLS, Vol.885, pp.279-284
Materials Research Society Symposium Proceedings
01/01/2006

Abstract

Chemistry Chemistry, Physical Electrochemistry Energy & Fuels Physical Sciences Science & Technology Technology
In order to clarify the charge transfer characteristics for H-2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The flatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H-2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

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