Chemical vapor deposition of Ge thin films using GeEt4 : Study of the reaction mechanisms

Conference proceeding

J EL BOUCHAM, M Amjoud, R Morancho, F Maury and A Yacoubi

Annales de chimie (Paris. 1914), Vol.23(1-2), pp.381-384

Moroccan Meeting on Solid State Chemistry (REMCES VII)

1998

Abstract

Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

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Title: Chemical vapor deposition of Ge thin films using GeEt4 : Study of the reaction mechanisms
Creators - without role: J EL BOUCHAM - Faculté des sciences, Département de Chimie, BP 4010, Beni M'hamed, Meknès, Morocco
M Amjoud - Faculté des Sciences et Techniques de Guéliz, Dép. de Chimie, BP 618, 40000 Marrakech, Morocco
R Morancho - Cristallochimie, Réactivité et Protection des Matériaux, CNRS/INPT, Ecole Nationale Supérieure de Chimie, 118 Route de Narbonne, 31077 Toulouse, France
F Maury - Cristallochimie, Réactivité et Protection des Matériaux, CNRS/INPT, Ecole Nationale Supérieure de Chimie, 118 Route de Narbonne, 31077 Toulouse, France
A Yacoubi - BP
Publication Details: Annales de chimie (Paris. 1914), Vol.23(1-2), pp.381-384
Conference: Moroccan Meeting on Solid State Chemistry (REMCES VII)
Publisher: Lavoisier
Grant note: Faculty of Science Faculty of Science and Techniques of Marrakech
Identifiers: 9928259208331
Academic Unit: Qassim University
Language: English
Resource Type: Conference proceeding