Abstract
Conference Title: 2017 IEEE International Electron Devices Meeting (IEDM) Conference Start Date: 2017, Dec. 2 Conference End Date: 2017, Dec. 6 Conference Location: San Francisco, CA, USA We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (A-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer A-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.