Comparative analysis of accelerated ageing effects on power RF LDMOS reliability

Conference proceeding

Peer reviewed

M. A Belaïd, K Ketata, K Mourgues, H Maanane, M Masmoudi and J Marcon

Microelectronics and reliability, Vol.45(9-11), pp.1732-1737

16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Arcachon, France, October 10-14, 2005

01/09/2005

Abstract

Applied sciences

Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Electronics

Exact sciences and technology

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Title: Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
Creators - without role: M. A Belaïd - Université de Rouen Normandie
K Ketata - Université de Rouen Normandie
K Mourgues - Université de Rouen Normandie
H Maanane - Université de Rouen Normandie
M Masmoudi - Université de Rouen Normandie
J Marcon - Université de Rouen Normandie
Publication Details: Microelectronics and reliability, Vol.45(9-11), pp.1732-1737
Conference: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Arcachon, France, October 10-14, 2005
Publisher: Elsevier
Identifiers: 9931450708331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Conference proceeding