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Contact engineering of monolayer CVD MOS2 transistors
Conference proceeding

Contact engineering of monolayer CVD MOS2 transistors

Abdullah Alharbi, Davood Shahrjerdi and IEEE
2017 75th Annual Device Research Conference (DRC), pp.1-2
06/2017
DOI: https://doi.org/10.1109/DRC.2017.7999404

Abstract

Contact resistance Doping Electrodes Molybdenum Sulfur Temperature measurement Transistors
We demonstrated significant reduction of the contact resistance (to -480Ω.μm) for tope-gated monolayer CVD MoS2 through a combination of work function engineering and effective n-type doping by HfOX. In addition to improving the contact resistance, our approach maintains the mobility (-64cm2/V.s.), 10N110FF ratio (>106), and subthreshold swing (425mV/dec) of these transistors.

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