Sign in
Back
Correlation of Fe-rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon
Conference proceeding   Peer reviewed

Correlation of Fe-rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Mohammad Jahangir Alam and Mohammad Ziaur Rahman
ADVANCED MATERIALS & SPORTS EQUIPMENT DESIGN, Vol.440(Advanced Materials & Sports Equipment Design), pp.82-87
Applied Mechanics and Materials
01/10/2013
DOI: https://doi.org/10.4028/www.scientific.net/AMM.440.82

Abstract

Engineering Engineering, Multidisciplinary Life Sciences & Biomedicine Materials Science Materials Science, Multidisciplinary Science & Technology Sport Sciences Technology
A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Metrics

1 Record Views

Details