Deep trench MOSFET structures study for a 1200 Volts application

L. Theolier; K. Isoird; F. Morancho; J. Roig; H. Mahfoz-Kotb; M. Brunet; P. Dubreuil; IEEE; H Kotb

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Deep trench MOSFET structures study for a 1200 Volts application

L. Theolier, K. Isoird, F. Morancho, J. Roig, H. Mahfoz-Kotb, M. Brunet, P. Dubreuil, IEEE and H Kotb

2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, pp.1498-1506

01/01/2007

Abstract

Energy & Fuels

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

In this work we studied some possible high voltage MOSFETs structures that can replace the IGBT in the railway traction converters. In this purpose, some high voltage power MOS structures are presented and theoretically compared using 2D simulations. Simulations results show that the DT-UMOSFET should be a good challenger to the 1200 Volts IGBT. Moreover, the influence of various parameters, like trench width, trench verticality or boron dose, on DT-UMOSFET static performances is shown.

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Title: Deep trench MOSFET structures study for a 1200 Volts application
Creators - without role: L. Theolier - University of Toulouse
K. Isoird - University of Toulouse
F. Morancho - University of Toulouse
J. Roig - University of Toulouse
H. Mahfoz-Kotb - University of Toulouse
M. Brunet - University of Toulouse
P. Dubreuil - University of Toulouse
IEEE
H Kotb - King Faisal University
Publication Details: 2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, pp.1498-1506
Publisher: IEEE
Number of pages: 9
Identifiers: 9919949008331
Academic Unit: King Faisal University
Language: English
Resource Type: Conference proceeding