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Deep-ultraviolet beta-Ga2O3 photodetectors grown on MgO substrates with a TiN template
Conference proceeding

Deep-ultraviolet beta-Ga2O3 photodetectors grown on MgO substrates with a TiN template

Kuang-Hui Li, Nasir Alfaraj, Chun Hong Kang, Laurentiu Braic, Nicolae Catalin Zoita, Adrian Emil Kiss, Tien Khee Ng, Boon S. Ooi and IEEE
2019 IEEE PHOTONICS CONFERENCE (IPC), pp.1-2
IEEE Photonics Conference
01/01/2019
DOI: https://doi.org/10.1109/IPCon.2019.8908509

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
This work investigates beta-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15 V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.

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