Abstract
Conference Title: 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) Conference Start Date: 2017, June 25 Conference End Date: 2017, June 30 Conference Location: Washington, DC, USA Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm2 and AZO/c-Si 19.72 mA/cm2. 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.